High speed silicon wet anisotropic etching for applications in bulk micromachining: a review

نویسندگان

چکیده

Abstract Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications the field of microelectromechanical systems (MEMS). In addition, it most widely used surface texturing minimize reflectance light improve efficiency crystalline solar cells. wet micromachining, etch rate a major factor that affects throughput. Slower increases fabrication time and therefore great concern MEMS industry where perform especially deep cavities freestanding by removal underneath material through undercutting process. Several methods have been proposed increase etchants either physical means (e.g. agitation, microwave irradiation) or chemically incorporation additives. The ultrasonic agitation during irradiation on rate. However, method may rupture fragile structures causes damage structures. Another temperature towards boiling point etchant. characteristics pure potassium hydroxide solution (KOH) studied near KOH, while surfactant added tetramethylammonium (TMAH) investigated at higher Both these studies shown potential way increasing elevating its point, which function concentration solution. effect kinds additives TMAH KOH. this paper, discussed. Recently hydroxylamine (NH 2 OH) KOH detail. NH OH TMAH/KOH varied optimize etchant composition obtain improved are important parameters article, different explored discussed so researchers/scientists/engineers can get details single reference.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching

Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to...

متن کامل

Bulk Micromachining of Silicon

Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surfacemicromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dr...

متن کامل

Dry Etching Based Silicon Micromachining

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...

متن کامل

Level Set Approach to Anisotropic Wet Etching of Silicon

In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates alon...

متن کامل

Multiscale modeling of anisotropic wet chemical etching of crystalline silicon

– We combine ab initio and Monte Carlo simulations in multiscale modelling of anisotropic wet chemical etching of silicon. The anisotropy of the macroscopic etching patterns observed in the experiments is explained by two mechanisms at an atomistic scale: the weakening of backbonds following OH termination of surface sites and the existence of significant interaction between the surface-termina...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Micro and Nano Systems Letters

سال: 2021

ISSN: ['2213-9621']

DOI: https://doi.org/10.1186/s40486-021-00129-0